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| SOT323 NPN SILICON PLANAR AVALANCHE TRANSISTOR ISSUE 1 - DECEMBER 1998 FEATURES * Avalanche mode operation * 50A Peak avalanche current * Low inductance packaging APPLICATIONS * Laser LED drivers * Fast edge generation * High speed pulse generators PARTMARKING DETAIL - T13 ZUMT413 ABSOLUTE MAXIMUM RATINGS. PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Peak Collector Current (25ns Pulse Width) Power Dissipation Operating and Storage Temperature Range SYMBOL VCBO VCEO VEBO IC ICM Ptot Tj:Tstg VALUE 150 50 6 100 50 330 -55 to +150 UNIT V V V mA A mW C ELECTRICAL CHARACTERISTICS (at Tamb = 25C unless otherwise stated). PARAMETER Collector-Emitter Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage SYMBOL V(BR)CES VCEO(sus) V(BR)EBO MIN. 150 50 6 0.1 0.1 0.15 0.8 22 31 50 TYP. MAX. UNIT V V V A A V V A A CONDITIONS. IC=100A IC=10mA IE=100A VCB=120V VEB=4V IC=10mA, IB=1mA IC=10mA, IB=1mA VC=110V, CCE=4.7nF* VC=130V, CCE=4.7nF* IC=10mA, VCE=10V Collector Cut-Off Current ICBO Emitter Cut-Off Current Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Current in Second Breakdown (Pulsed) Static Forward Current Transfer Ratio IEBO VCE(sat) VBE(sat) IUSB hFE *Measured within a circuit possessing an approximate loop inductance of 12nH. The I(USB) monitor circuitry reflects 0.15 Ohm into the Collector-Emitter Discharge Loop ZUMT413 ELECTRICAL CHARACTERISTICS PARAMETER Emitter Inductance Transition Frequency Collector-Base Capacitance . SYMBOL Le fT Ccb MIN. TYP. 2.5 150 2 MAX. UNIT nH MHz pF CONDITIONS. Standard SOT323 leads IC=10mA, VCE=5V f=20MHz VCB=10V, IE=0 f=1MHz TYPICAL CHARACTERISTICS # - Avalanche Current (A) ++-=2x4.7nF I*=5mA/ns Tamb=25C C+-=4.7nF " ! p.r.f.=10KHz C+-=2.2nF C+-=1.0nF I( 0 50 100 150 200 250 VS - Supply Voltage (V) |
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